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dc.contributor.authorKim, Dong Hun-
dc.contributor.authorChoi, Seung-Hoon-
dc.contributor.authorCho, Nam Gyu-
dc.contributor.authorChang, YoungEun-
dc.contributor.authorKim, Ho-Gi-
dc.contributor.authorHong, Jae-Min-
dc.contributor.authorKim, Il-Doo-
dc.date.accessioned2024-01-20T21:30:52Z-
dc.date.available2024-01-20T21:30:52Z-
dc.date.created2021-09-01-
dc.date.issued2009-06-
dc.identifier.issn1099-0062-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/132471-
dc.description.abstractWe report on the fabrication and characterization of sputter-deposited poly(methyl methacrylate) (PMMA) thin films used as gate insulators as well as passivation layers in high performance InGaZnO4 thin-film transistors (TFTs). Sputter-deposited PMMA thin films exhibited a dielectric constant of 4.3 and low leakage current characteristics (<similar to 2x10(-8) A/cm(2) at 0.3 MV/cm). The InGaZnO4 TFTs utilizing PMMA gate insulators and PMMA passivation layers exhibited a high on/off current ratio of 4.08x10(6) and a high field-effect mobility of 36.1 cm(2)/V s. Threshold voltage and field-effect mobility remained constant after aging in air atmosphere for 5 months.-
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectPOLYMER-
dc.subjectMOBILITY-
dc.titleHigh Stability InGaZnO4 Thin-Film Transistors Using Sputter-Deposited PMMA Gate Insulators and PMMA Passivation Layers-
dc.typeArticle-
dc.identifier.doi10.1149/1.3142470-
dc.description.journalClass1-
dc.identifier.bibliographicCitationELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.H296 - H298-
dc.citation.titleELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.citation.volume12-
dc.citation.number8-
dc.citation.startPageH296-
dc.citation.endPageH298-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000266975000018-
dc.identifier.scopusid2-s2.0-67649229450-
dc.relation.journalWebOfScienceCategoryElectrochemistry-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaElectrochemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusPOLYMER-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordAuthorageing-
dc.subject.keywordAuthorgallium compounds-
dc.subject.keywordAuthorindium compounds-
dc.subject.keywordAuthorleakage currents-
dc.subject.keywordAuthorpassivation-
dc.subject.keywordAuthorpermittivity-
dc.subject.keywordAuthorpolymer films-
dc.subject.keywordAuthorsemiconductor materials-
dc.subject.keywordAuthorsputter deposition-
dc.subject.keywordAuthorthin film transistors-
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