Full metadata record

DC Field Value Language
dc.contributor.authorLee, Dong Uk-
dc.contributor.authorLee, Min Seung-
dc.contributor.authorKim, Eun Kyu-
dc.contributor.authorKoo, Hyun-Mo-
dc.contributor.authorCho, Won-Ju-
dc.contributor.authorKim, Won Mok-
dc.date.accessioned2024-01-20T21:32:49Z-
dc.date.available2024-01-20T21:32:49Z-
dc.date.created2021-09-01-
dc.date.issued2009-05-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/132550-
dc.description.abstractNonvolatile memory devices with double-stacked Au nano-crystals on p-type (100) silicon-on-insulator wafers were fabricated and the electrical characteristics, such as the subthreshold property, the threshold voltage shift and the retention property, were analyzed. Here, the Au nano-crystals, the SiO(1.3)N control and the tunnel oxides were deposited by reactive RF magnetron sputtering. The channel length and width of the nano-floating gate memory, which contained the double-stacked Au nano-crystals, were 20 mu m. The memory window was about 1.23 V when the programming and erasing times of this memory device were approximately 500 mu s and 5 ms, respectively. However, the memory window increased up to about 6 V when initial programming/erasing conditions were 20 V for 200 ms and -20 V for 500 ms and it was maintained at 2.7 V after 10(3) s.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectELECTRICAL CHARACTERIZATION-
dc.subjectFLOATING-GATE-
dc.subjectPARTICLES-
dc.titleFabrication of a Nonvolatile Memory with Double-Stacked Au Nano-Crystals-
dc.typeArticle-
dc.identifier.doi10.3938/jkps.54.1824-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.5, pp.1824 - 1828-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume54-
dc.citation.number5-
dc.citation.startPage1824-
dc.citation.endPage1828-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART001500881-
dc.identifier.wosid000266093900011-
dc.identifier.scopusid2-s2.0-68049116823-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTRICAL CHARACTERIZATION-
dc.subject.keywordPlusFLOATING-GATE-
dc.subject.keywordPlusPARTICLES-
dc.subject.keywordAuthorAu-
dc.subject.keywordAuthorNano-floating gate memory-
dc.subject.keywordAuthorSiON-
Appears in Collections:
KIST Article > 2009
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE