DSpace at KISTKIST Article2009

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dc.contributor.author김진상-
dc.contributor.author서상희-
dc.date.accessioned2024-01-20T21:34:07Z-
dc.date.available2024-01-20T21:34:07Z-
dc.date.created2021-09-06-
dc.date.issued2009-04-
dc.identifier.issn1225-5475-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/132602-
dc.description.abstract64×1 forcal plane infrared detector has been fabricated by using HgCdTe epi layer. HgCdTe was grown on GaAs substrate by using metal organic chemical vapor deposition. This paper describes key developments in the epi layer growth and device fabrication process. The performance of IR imaging system is summarized.-
dc.languageKorean-
dc.publisher한국센서학회-
dc.titleHg1-xCdxTe를 이용한 64×1 선형 적외선 감지 소자 제작-
dc.title.alternativeFabrication of 64×1 linear array infrared detector using Hg1-xCdxTe-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation센서학회지, v.18, no.2, pp.135 - 138-
dc.citation.title센서학회지-
dc.citation.volume18-
dc.citation.number2-
dc.citation.startPage135-
dc.citation.endPage138-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART001329630-
dc.subject.keywordAuthorHgCdTe-
dc.subject.keywordAuthorIR detector-
dc.subject.keywordAuthorMOCVD-
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KIST Article > 2009
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