The energetics of helium and hydrogen atoms in beta-SiC: an ab initio approach

Authors
Kim, Jong HyunKwon, Yong DukYonathan, ParlindunganHidayat, IkhwanLee, June GunnChoi, Jung-HaeLee, Seung-Cheol
Issue Date
2009-04
Publisher
SPRINGER
Citation
JOURNAL OF MATERIALS SCIENCE, v.44, no.7, pp.1828 - 1833
Abstract
Silicon carbide is a prime candidate for plasma-facing materials in future fusion reactors. The formation energies of various interstitial configurations of helium and hydrogen atoms in beta-SiC were estimated based on density functional theory. Special consideration was given to the helium and hydrogen interstitials as the bubble seeds in beta-SiC. From an energetic point of view, only one helium atom could position itself into the tetrahedral sites. However, up to three hydrogen atoms could easily position themselves into the tetrahedral sites by forming a stable H-2 molecule or a 3H-trimer that was newly identified in this study. Based on the different behaviors of helium and hydrogen, an explanation is proposed for the experimental observations of bubble formation in irradiated beta-SiC.
Keywords
IRRADIATION TEMPERATURE; DIMENSIONAL STABILITY; PROPERTY CHANGE; H-2; MICROSTRUCTURE; MOLECULES; DAMAGE; IRRADIATION TEMPERATURE; DIMENSIONAL STABILITY; PROPERTY CHANGE; H-2; MICROSTRUCTURE; MOLECULES; DAMAGE; SiC/SiC composite; silicon carbide; irradiation temperature; dimensional stability; microstructure
ISSN
0022-2461
URI
https://pubs.kist.re.kr/handle/201004/132640
DOI
10.1007/s10853-008-3180-2
Appears in Collections:
KIST Article > 2009
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE