Optical properties of ZnO nanoparticles embedded in a silicon nitride layer formed by sputtering and thermal treatment

Authors
Oh, Do-HyunCho, Woon-JoKim, Tae Whan
Issue Date
2009-03
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.9, no.2, pp.E173 - E175
Abstract
Transmission electron microscopy images of annealed ZnO/silicon nitride (SiNx) multilayer grown on Si (100) substrates showed that the ZnO nanoparticles were formed inside the SiNx layer. The photoluminescence (PL) spectrum of a sample consisting of ZnO/SiNx multilayer with a SiNx buffer layer annealed at 800 degrees C showed that only a strong ultraviolet (UV) emission peak around 376 nm, corresponding to the ZnO nanoparticles, appeared in the visible range. The full width at half maximum of the UV peak of the PL spectrum was approximately 13 nm indicative of the high-quality of the ZnO nanoparticles. The optical properties of the ZnO nanoparticles were enhanced with increasing thickness of the deposited ZnO thin film (C) 2009 Elsevier B.V. All rights reserved.
Keywords
QUANTUM-DOT; ELECTRON-SPIN; SYSTEM; QUANTUM-DOT; ELECTRON-SPIN; SYSTEM; ZnO nanoparticles; Silicon nitride layer; Thermal annealing treatment; Optical properties
ISSN
1567-1739
URI
https://pubs.kist.re.kr/handle/201004/132704
DOI
10.1016/j.cap.2008.12.053
Appears in Collections:
KIST Article > 2009
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