Possibility of SOI Fabrication Using Plasma Source Ion Implantation with High-Power Pulsed RF Plasma

Abstract

Silicon-on-insulator (SOI) structure fabricated by plasma source ion implantation (PSII) with high-power pulsed RF plasma has been studied. Oxygen ions were implanted into p-type silicon wafer and high temperature annealing was subsequently used to form SOI structure. The top silicon and the buried oxide (BOX) layer were formed with 500 angstrom and 400 angstrom, respectively, in the sample implanted with the dose of 2.5x10(17) #/cm(2) at the ion energy of -75 kV and annealed at 1350 degrees C for 30 min in Ar+O-2 (0.5 %) ambient. This study showed the possibility of SOI fabrication using the PSII with pulsed ICP source.