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dc.contributor.authorAhn, M. -W.-
dc.contributor.authorPark, K. -S.-
dc.contributor.authorHeo, J. -H.-
dc.contributor.authorPark, J. -G.-
dc.contributor.authorKim, D. -W.-
dc.contributor.authorChoi, K. J.-
dc.contributor.authorLee, J. -H.-
dc.contributor.authorHong, S. -H.-
dc.date.accessioned2024-01-20T22:04:36Z-
dc.date.available2024-01-20T22:04:36Z-
dc.date.created2021-09-01-
dc.date.issued2008-12-29-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/132868-
dc.description.abstractThe effect of oxygen-vacancy-related defects on gas-sensing properties of ZnO-nanowire gas sensors was investigated. Gas sensors were fabricated by growing ZnO nanowires bridging the gap between two prepatterned Au catalysts. The sensor displayed fast response and recovery behavior with a maximum sensitivity to NO2 gas at 225 degrees C. Gas sensitivity was found to be linearly proportional to the photoluminescence intensity of oxygen-vacancy-related defects in both as-fabricated and defect-controlled gas sensors by postannealing in Ar and H-2 atmosphere. This result agrees well with previous theoretical prediction that oxygen vacancies play a role of preferential adsorption sites for NO2 molecules.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectTHIN-FILMS-
dc.subjectNO2-
dc.subjectEMISSION-
dc.subjectFIELD-
dc.titleGas sensing properties of defect-controlled ZnO-nanowire gas sensor-
dc.typeArticle-
dc.identifier.doi10.1063/1.3046726-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.93, no.26-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume93-
dc.citation.number26-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000262225700055-
dc.identifier.scopusid2-s2.0-58149268952-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusNO2-
dc.subject.keywordPlusEMISSION-
dc.subject.keywordPlusFIELD-
dc.subject.keywordAuthoradsorption-
dc.subject.keywordAuthorannealing-
dc.subject.keywordAuthorcatalysts-
dc.subject.keywordAuthorgas sensors-
dc.subject.keywordAuthorgold-
dc.subject.keywordAuthorII-VI semiconductors-
dc.subject.keywordAuthornanotechnology-
dc.subject.keywordAuthornanowires-
dc.subject.keywordAuthorphotoluminescence-
dc.subject.keywordAuthorvacancies (crystal)-
dc.subject.keywordAuthorwide band gap semiconductors-
dc.subject.keywordAuthorzinc compounds-
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