Gate Field Effect on Spin Transport Signals in a Lateral Spin-Valve Device

Abstract

The gate field effect on spin transport signals was detected in lateral ferromagnet-semiconductor hybrid devices. In the diffusive model, the change in the channel resistance induces a spin transport signal difference, but a non-local measurement shows that Delta R is almost constant with varying the gate voltage. The reason is that the spin diffusion length is slightly decreased with decreasing gate voltage due to the stronger spin-orbit interaction. At T = 20 K, the spin diffusion length call be decreased by 2.5 % by applying a gate voltage of -3 V.