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dc.contributor.authorLee, Sang Yeol-
dc.contributor.authorSong, Yong-Won-
dc.contributor.authorJeon, Kyung Ah-
dc.date.accessioned2024-01-20T22:33:03Z-
dc.date.available2024-01-20T22:33:03Z-
dc.date.created2021-09-03-
dc.date.issued2008-10-01-
dc.identifier.issn0022-0248-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/133066-
dc.description.abstractWe have synthesized the resistance-controlled Ga-doped ZnO nanowires employing self-designed hot-walled pulsed laser deposition, and investigated the status of the Ga-doping highlighting the chemical structure change, the stack-structured morphology, and the optical property of the nanowires. Especially the chemical structure is quantitatively evaluated, verifying that the substitutional Ga atoms and oxygen vacancies are proportional to the Ga-doping concentration. The resultant data of the controlled resistance ranging from 1.6 to 70 M Omega are presented. (C) 2008 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectMOLECULAR-BEAM EPITAXY-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectGROWTH-
dc.subjectTRANSPARENT-
dc.subjectDEPOSITION-
dc.subjectFILMS-
dc.subjectTHIN-
dc.titleSynthesis and analysis of resistance-controlled Ga-doped ZnO nanowires-
dc.typeArticle-
dc.identifier.doi10.1016/j.jcrysgro.2008.07.049-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF CRYSTAL GROWTH, v.310, no.20, pp.4477 - 4480-
dc.citation.titleJOURNAL OF CRYSTAL GROWTH-
dc.citation.volume310-
dc.citation.number20-
dc.citation.startPage4477-
dc.citation.endPage4480-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000260691000014-
dc.identifier.scopusid2-s2.0-52149094973-
dc.relation.journalWebOfScienceCategoryCrystallography-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaCrystallography-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusMOLECULAR-BEAM EPITAXY-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusTRANSPARENT-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusTHIN-
dc.subject.keywordAuthorDoping-
dc.subject.keywordAuthorNanomaterials-
dc.subject.keywordAuthorPhysical vapor deposition processes-
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