Spin Hall effect induced by a Pd/CoFe multilayer in a semiconductor channel

Abstract

The spin Hall effect is observed for an InAs-based two-dimensional electron gas. Due to the spin Hall effect, the motion of the spin-polarized electrons deviates and causes a charge accumulation at the edge of the InAs channel. A spin imbalance between spin up and down is induced by spin injection from the Pd/CoFe multilayer, which is perpendicularly magnetized. This charge accumulation induces a transverse voltage in the absence of an external magnetic field. The observed spin Hall voltage decreases with increasing temperature and shows the same tendency as the spin diffusion length.