Structural, Optical, and Electrical Properties of Semiconducting ZnO Nanosheets

Authors
Park, Jae-HwanKang, Gyo-SungKwon, Soon-IiLim, Dong-GunChoi, Young-JinChoi, Kyoung-JinPark, Jae-Gwan
Issue Date
2008-09
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.9, pp.4658 - 4661
Abstract
ZnO nanosheets were fabricated by an oxygen-assisted carbothermal reduction process and their properties were evaluated. In particular, the FET characteristics and photoluminescence properties of ZnO nanosheets were evaluated. The conduction type of ZnO nanosheets was determined as an n-type and the mobility was 20 similar to 40 cm(2)/V-s, which is fairly high compared to ZnO nanowires. This might be attributed to the wide conduction area of ZnO nanosheet compared to nanowire structures and their better crystallinity.
Keywords
THIN-FILMS; CRYSTAL-GROWTH; NANOWIRES; SAPPHIRE; THIN-FILMS; CRYSTAL-GROWTH; NANOWIRES; SAPPHIRE; ZnO; Nanosheet; Nanowire; Photoluminescence; FET
ISSN
1533-4880
URI
https://pubs.kist.re.kr/handle/201004/133217
DOI
10.1166/jnn.2008.IC07
Appears in Collections:
KIST Article > 2008
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