Structural, Optical, and Electrical Properties of Semiconducting ZnO Nanosheets
- Authors
- Park, Jae-Hwan; Kang, Gyo-Sung; Kwon, Soon-Ii; Lim, Dong-Gun; Choi, Young-Jin; Choi, Kyoung-Jin; Park, Jae-Gwan
- Issue Date
- 2008-09
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.9, pp.4658 - 4661
- Abstract
- ZnO nanosheets were fabricated by an oxygen-assisted carbothermal reduction process and their properties were evaluated. In particular, the FET characteristics and photoluminescence properties of ZnO nanosheets were evaluated. The conduction type of ZnO nanosheets was determined as an n-type and the mobility was 20 similar to 40 cm(2)/V-s, which is fairly high compared to ZnO nanowires. This might be attributed to the wide conduction area of ZnO nanosheet compared to nanowire structures and their better crystallinity.
- Keywords
- THIN-FILMS; CRYSTAL-GROWTH; NANOWIRES; SAPPHIRE; THIN-FILMS; CRYSTAL-GROWTH; NANOWIRES; SAPPHIRE; ZnO; Nanosheet; Nanowire; Photoluminescence; FET
- ISSN
- 1533-4880
- URI
- https://pubs.kist.re.kr/handle/201004/133217
- DOI
- 10.1166/jnn.2008.IC07
- Appears in Collections:
- KIST Article > 2008
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