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dc.contributor.authorPark, Jae-Wan-
dc.contributor.authorYang, Min Kyu-
dc.contributor.authorLee, Jeon-Kook-
dc.date.accessioned2024-01-20T23:01:21Z-
dc.date.available2024-01-20T23:01:21Z-
dc.date.created2021-09-03-
dc.date.issued2008-08-
dc.identifier.issn1099-0062-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/133277-
dc.description.abstractThe electrode dependence of bipolar resistive switching in SrZrO3:Cr-based metal-oxide-metal (MOM) structures was investigated. The Pt/SrZrO3:Cr/SrRuO3 structures showed bipolar resistive switching, and the polarities of external bias for set/reset processes were determined by the junction between SrZrO3:Cr film and SrRuO3 electrode. The MOM structure consisting of noble metal electrodes (Pt/SrZrO3:Cr/Pt) did not show resistive switching, while the TiOxNy-inserted MOM structure (Pt/SrZrO3:Cr/TiOxNy/Pt) exhibited reproducible resistive switching behavior. The results suggest that resistive switching behaviors are related to the formation and annihilation of oxygen vacancies within local conduction paths by electric-field-induced oxygen ion migration.-
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectDIFFUSION-BARRIERS-
dc.titleElectrode dependence of bipolar resistive switching in SrZrO3 : Cr perovskite film-based memory devices-
dc.typeArticle-
dc.identifier.doi10.1149/1.2937460-
dc.description.journalClass1-
dc.identifier.bibliographicCitationELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.8, pp.H226 - H229-
dc.citation.titleELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.citation.volume11-
dc.citation.number8-
dc.citation.startPageH226-
dc.citation.endPageH229-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000256706100024-
dc.identifier.scopusid2-s2.0-45249103712-
dc.relation.journalWebOfScienceCategoryElectrochemistry-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaElectrochemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusDIFFUSION-BARRIERS-
dc.subject.keywordAuthorresistive switching-
dc.subject.keywordAuthormemory device-
dc.subject.keywordAuthorSrZrO3-
dc.subject.keywordAuthorCr doping-
dc.subject.keywordAuthorelectrode dependency-
dc.subject.keywordAuthornonvolatile memory-
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