Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p-InP (100) substrates
- Authors
- Yuk, J. M.; Lee, J. Y.; No, Y. S.; Kim, T. W.; Choi, W. K.
- Issue Date
- 2008-04-15
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.103, no.8
- Abstract
- High-resolution transmission electron microscopy (HRTEM) images, selected-area electron diffraction (SAED) patterns, and energy dispersive x-ray spectroscopy (EDS) profiles showed that P atoms accumulated due to thermal treatment on the top sides and in the heterointerface layers of ZnO thin films grown on p-InP (100) substrates, resulting in the formation of amorphous ZnO layers in the ZnO thin films. The formation mechanisms of the ZnO amorphous layers due to thermal treatment are described on the basis of the HRTEM, the SAED, and the EDS measurements. (c) 2008 American Institute of Physics.
- Keywords
- OPTICAL-PROPERTIES; LASERS; SI; PHOTOLUMINESCENCE; GAAS; OPTICAL-PROPERTIES; LASERS; SI; PHOTOLUMINESCENCE; GAAS
- ISSN
- 0021-8979
- URI
- https://pubs.kist.re.kr/handle/201004/133548
- DOI
- 10.1063/1.2908874
- Appears in Collections:
- KIST Article > 2008
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.