Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p-InP (100) substrates

Authors
Yuk, J. M.Lee, J. Y.No, Y. S.Kim, T. W.Choi, W. K.
Issue Date
2008-04-15
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.103, no.8
Abstract
High-resolution transmission electron microscopy (HRTEM) images, selected-area electron diffraction (SAED) patterns, and energy dispersive x-ray spectroscopy (EDS) profiles showed that P atoms accumulated due to thermal treatment on the top sides and in the heterointerface layers of ZnO thin films grown on p-InP (100) substrates, resulting in the formation of amorphous ZnO layers in the ZnO thin films. The formation mechanisms of the ZnO amorphous layers due to thermal treatment are described on the basis of the HRTEM, the SAED, and the EDS measurements. (c) 2008 American Institute of Physics.
Keywords
OPTICAL-PROPERTIES; LASERS; SI; PHOTOLUMINESCENCE; GAAS; OPTICAL-PROPERTIES; LASERS; SI; PHOTOLUMINESCENCE; GAAS
ISSN
0021-8979
URI
https://pubs.kist.re.kr/handle/201004/133548
DOI
10.1063/1.2908874
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KIST Article > 2008
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