Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jae-Ho | - |
dc.contributor.author | Oh, Do-Hyun | - |
dc.contributor.author | Lee, Soo-Jin | - |
dc.contributor.author | Lee, Kyu-Hwan | - |
dc.contributor.author | Cho, Woon-Jo | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Park, Young Ju | - |
dc.date.accessioned | 2024-01-21T00:30:41Z | - |
dc.date.available | 2024-01-21T00:30:41Z | - |
dc.date.created | 2021-08-31 | - |
dc.date.issued | 2007-10-15 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/134041 | - |
dc.description.abstract | Capacitance-voltage (C-P) and electrostatic force microscopy (EFM) measurements on Si nanocrystals (Si-NCs) formed by using the sonochemical method were carried out to investigate the charging effects of the Si-NCs. Transmission electron microscopy images and atomic force microscopy images showed that the Si-NCs were created inside the SiO2 layer. The C-V curve and the EFM image showed that the Si-NCs embedded in the SiO2 layer experienced charging effects. The macroscopic surface charge density determined from the C-V curve was in reasonable agreement with the microscopic local value obtained from the EFM image. The present results indicate that the EFM technique might provide a promising method for investigating charging effects in various kinds of nanocrystals embedded in the insulating layer. (C) 2007 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | SILICON NANOCRYSTALS | - |
dc.subject | QUANTUM CONFINEMENT | - |
dc.subject | DOTS | - |
dc.subject | MEMORY | - |
dc.title | Macroscopic and microscopic charging effects of Si nanocrystals embedded in a SiO2 layer | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2007.08.031 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.308, no.2, pp.278 - 282 | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 308 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 278 | - |
dc.citation.endPage | 282 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000250991000008 | - |
dc.identifier.scopusid | 2-s2.0-35348908926 | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
dc.subject.keywordPlus | QUANTUM CONFINEMENT | - |
dc.subject.keywordPlus | DOTS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordAuthor | nanostructures | - |
dc.subject.keywordAuthor | nanomaterials | - |
dc.subject.keywordAuthor | semiconducting silicon | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.