Macroscopic and microscopic charging effects of Si nanocrystals embedded in a SiO2 layer
- Authors
- Kim, Jae-Ho; Oh, Do-Hyun; Lee, Soo-Jin; Lee, Kyu-Hwan; Cho, Woon-Jo; Kim, Tae Whan; Park, Young Ju
- Issue Date
- 2007-10-15
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.308, no.2, pp.278 - 282
- Abstract
- Capacitance-voltage (C-P) and electrostatic force microscopy (EFM) measurements on Si nanocrystals (Si-NCs) formed by using the sonochemical method were carried out to investigate the charging effects of the Si-NCs. Transmission electron microscopy images and atomic force microscopy images showed that the Si-NCs were created inside the SiO2 layer. The C-V curve and the EFM image showed that the Si-NCs embedded in the SiO2 layer experienced charging effects. The macroscopic surface charge density determined from the C-V curve was in reasonable agreement with the microscopic local value obtained from the EFM image. The present results indicate that the EFM technique might provide a promising method for investigating charging effects in various kinds of nanocrystals embedded in the insulating layer. (C) 2007 Elsevier B.V. All rights reserved.
- Keywords
- SILICON NANOCRYSTALS; QUANTUM CONFINEMENT; DOTS; MEMORY; SILICON NANOCRYSTALS; QUANTUM CONFINEMENT; DOTS; MEMORY; nanostructures; nanomaterials; semiconducting silicon
- ISSN
- 0022-0248
- URI
- https://pubs.kist.re.kr/handle/201004/134041
- DOI
- 10.1016/j.jcrysgro.2007.08.031
- Appears in Collections:
- KIST Article > 2007
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