Undoped homojunction chalcogen thin-film transistors on glass

Abstract

A technique to develop an undoped homojunction chalcogen thin-film transistor (UHJ-c-TFT) on glass is described. The UHJ-c-TFT is based on ternary chalcogenide alloy amorphous (alpha) Ge2Sb2Te5 (GST) and the positively cooled crystalline (chi) GST. The alpha-GST and the positively cooled chi-GST are used as a channel layer and ohmic contact layer, respectively. In the UHJ-c-TFT, the authors realize electric rectification by the energy difference from the Fermi level of the alpha-GST and the Fermi level of the positively cooled chi-GST. The UHJ-c-TFT shows the clear gate characteristics of a typical p-channel enhancement mode. (c) 2007 American Institute of Physics.