전해 도금을 이용한 기가급 소자용 구리배선 공정

Abstract

The transition of interconnection metal from aluminum alloy to copper has been introduced to meet therequirements of high speed, ultra-large scale integration, and high reliability of the semiconductor device. Since cop-per, which has low electrical resistivity and high resistance to degradation, has diferent electrical and material char-copper interconnection. In this review, some important factors of multilevel copper damascene process have beensurveyed such as diffusion barier, sed layer, organic additives for bottom-up electro/electroless deposition, chemicalmechanical polishing, and capping layer to introduce the related issues and recent research trends on them.