Electrical properties of Sol-infiltrated PCW-PZT thick films on SiC thick films

Abstract

We have fabricated a PCW-PZT thick film on Pt/TiO2/SiNx/SiC/Si substrates. SiC thick films were deposited on the Si substrate by a thermal CVD method. SiNx. films with different film thicknesses as a diffusion barrier layer were deposited on SiC/Si substrates using plasma enhanced chemical vapor deposition (PECVD). For application of a cantilever-based device, a SiC thick film was used as a supporting material in order to improve sensitivity of the cantilever-based sensor. A screen printed thick film and a sol infiltrated thick film were also compared. The PCW-PZT thick film showed a much denser microstructure using the sol infiltration method. The electrical properties of the PZT solid solution prepared were predominantly realized in the low temperature region. In the case of the sol infiltrated PCW-PZT thick film sintered at 850 degrees C, the remanent polarization (P-r) was about 12.7 mu C/cm(2) at an applied field of 150 kV/cm, and the dielectric permittivity (epsilon(r)) was 516 at a frequency of 100 kHz.