Transparent, low resistance, and flexible amorphous ZnO-doped In2O3 anode grown on a PES substrate

Authors
Bae, Jung-HyeokMoon, Jong-MinKang, Jae-WookPark, Hyung-DolKim, Jang-JooCho, Woon JoKim, Han-Ki
Issue Date
2007-03
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.3, pp.J81 - J85
Abstract
Transparent and low resistance amorphous ZnO-doped In2O3 (IZO) anode films were grown by radio-frequency (rf) sputtering on an organic passivated polyethersulfone (PES) substrate for use in flexible organic light-emitting diodes (OLEDs). Under optimized growth conditions, a sheet resistance of 15.2 Omega/square, average transmittance above 89% in the green range, and a root mean square roughness of 0.375 nm were obtained, even for the IZO anode film grown in a pure Ar ambient without the addition of oxygen as a reactive gas. All of the IZO anode films had an amorphous structure regardless of the rf power and the working pressure due to the low substrate temperature of 50 degrees C and the structural stability of the amorphous IZO films. In addition, an X-ray photoelectron spectroscopy depth profile obtained for the IZO/PES showed no obvious evidence of interfacial reactions between the IZO anode and the PES substrate, except for some indiffusion of oxygen atoms from the IZO anode. Furthermore, the current-voltage-luminance of the flexible OLEDs fabricated on IZO anode was found to be critically dependent on the sheet resistance of the IZO anode. (c) 2007 The Electrochemical Society. All rights reserved.
Keywords
INDIUM-TIN-OXIDE; LIGHT-EMITTING-DIODES; THIN-FILMS; ELECTRICAL-PROPERTIES; WORK FUNCTION; SPECTROSCOPY; DISPLAYS; DEVICES; INDIUM-TIN-OXIDE; LIGHT-EMITTING-DIODES; THIN-FILMS; ELECTRICAL-PROPERTIES; WORK FUNCTION; SPECTROSCOPY; DISPLAYS; DEVICES; ZnO; Flexible; Anode
ISSN
0013-4651
URI
https://pubs.kist.re.kr/handle/201004/134582
DOI
10.1149/1.2426800
Appears in Collections:
KIST Article > 2007
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