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dc.contributor.authorKim, Tae Whan-
dc.contributor.authorShin, Jae Won-
dc.contributor.authorLee, Jeong Yong-
dc.contributor.authorJung, Jae Hun-
dc.contributor.authorLee, Jung Wook-
dc.contributor.authorChoi, Won Kook-
dc.contributor.authorJin, Sungho-
dc.date.accessioned2024-01-21T01:34:21Z-
dc.date.available2024-01-21T01:34:21Z-
dc.date.created2021-09-05-
dc.date.issued2007-01-29-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/134722-
dc.description.abstractElectron-beam-induced Zn nanocrystal islands were formed in a dielectric SiO2 layer. When a ZnO thin film on a p-type Si with amorphous SiOx interface layer is subjected to a 900 degrees C annealing followed by electron irradiation in a transmission electron microscope environment, an amorphous Zn2xSi1-xO2 layer is formed. Upon irradiation with a 300 keV electrons, metallic and single crystal nanoislands of Zn with similar to 7-10 nm diameter were formed and embedded within the SiO2 interface layer. Possible mechanisms for the formation of Zn nanocrystals are presented.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectQUANTUM-DOT-
dc.subjectSILICON NANOCRYSTALS-
dc.subjectROOM-TEMPERATURE-
dc.subjectCOULOMB-BLOCKADE-
dc.subjectFABRICATION-
dc.subjectTRANSISTORS-
dc.subjectMICROSCOPE-
dc.subjectSYSTEM-
dc.subjectMEMORY-
dc.subjectFIELD-
dc.titleElectron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer-
dc.typeArticle-
dc.identifier.doi10.1063/1.2450650-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.90, no.5-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume90-
dc.citation.number5-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000243977300035-
dc.identifier.scopusid2-s2.0-33846981859-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusQUANTUM-DOT-
dc.subject.keywordPlusSILICON NANOCRYSTALS-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusCOULOMB-BLOCKADE-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusMICROSCOPE-
dc.subject.keywordPlusSYSTEM-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusFIELD-
dc.subject.keywordAuthorZn-
dc.subject.keywordAuthornanocrystal-
dc.subject.keywordAuthorelectron beam-
dc.subject.keywordAuthorSiO2-
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