Organic photovoltaic devices with Ga-doped ZnO electrode

Abstract

The authors report two organic photovoltaic devices using a Ga-doped ZnO (GZO) film as a transparent conducting electrode. In the first structure, the conventional In2O3:Sn hole-collecting anode was replaced by GZO and an efficiency of 0.35% was obtained. The second has the inverse structure where GZO was used as the electron-collecting cathode and gave a nonoptimized device efficiency of about 1.4%. Furthermore, this inverse structure of GZO devices provides a passivation layer to protect the active layer from the atmosphere. (c) 2007 American Institute of Physics.