InAs/GaAs quantum-dot laser diode lasing at 1.3 mu m with triple-stacked-layer dots-in-a-well structure grown by atomic layer epitaxy

Authors
Kim, Kwang WoongCho, Nam KiRyu, Sung PhilSong, Jin DongChoi, Won JunLee, Jung IlPark, Jung Ho
Issue Date
2006-10
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.10A, pp.8010 - 8013
Abstract
We report the first demonstration of room-temperature (RT) lasing at 1.3 mu m from the ground state of three-stacked InAs quantum dots (QDs) in an In0.15Ga0.85As quantum well, which was grown by atomic layer epitaxy (ALE). For an as-cleaved device with a 2000-mu m-long x 15-mu m-wide ridge structure, the threshold current density (J(th)) at RT is 155 A/cm(2) with the ground state lasing at 1310nm under pulsed operation. The thermal coefficient of a lasing wavelength shift is 0.53 nm/K and the characteristic temperature is 103 K near RT. The lasing wavelength of the QD laser diodes (LDs) shows simultaneous lasing and the state switching from the ground state at 1310nm and to the first excited state at 1232nm kith increasing injection current owing to the gain saturation of the ground state. The performance of ALE QD-LD is comparable to that of the conventional Stranski-Krastanov QD-LD.
Keywords
ROOM-TEMPERATURE; THRESHOLD CURRENT; SPACER LAYER; DEPENDENCE; ROOM-TEMPERATURE; THRESHOLD CURRENT; SPACER LAYER; DEPENDENCE; InAs/GaAs quantum dot; laser diode; atomic layer epitaxy; simultaneous lasing
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/135084
DOI
10.1143/JJAP.45.8010
Appears in Collections:
KIST Article > 2006
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE