Temperature-dependent switching current of Cr-doped SrZrO3/SrRuO3 deposited for ReRAM applications by using PLD

Abstract

We have investigated the electrical transport in a Pt/Cr-doped SZO/SRO thin film, which is one of the candidate materials for a resistive RAM (RRAM), deposited by using pulsed laser deposition (PLD) as a function of temperature. A clear current switching between low-resistance ON and high-resistance OFF states is observed. As the temperature is lowered, the ON-to-OFF current ratio is increased. A pulsed voltage with a frequency of 10 Hz similar to 1 kHz is also applied to explore the nonvolatile memory properties, and the transient time is estimated. Stable switching characteristics are observed over the entire range of temperatures and frequencies. Interestingly, the ON-to-OFF current ratio decreases with increasing frequency.