Fabrication of high density CdTe/GaAs nanodot arrays using nanoporous alumina masks

Authors
Jung, MiLee, Hong SeokPark, Hong LeeMho, Sun-il
Issue Date
2006-08
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.6, pp.E187 - E191
Abstract
Long-range ordered semiconductor CdTe nanodot arrays of the uniform size were formed by molecular-beam epitaxy on the GaAs substrate as a replica of the nanoporous alumina mask in spite of the large lattice mismatch between GaAs and CdTe. The number per unit area and the size of nanodots of the heterostructure semiconductor CdTe/GaAs were controlled by those of pores in the mask. Using a very thin nanoporous alumina mask (<200 nm thick) prepared at the anodization voltage of 30 V in oxalic acid, fabricated were the arrays of CdTe nanodots (55 nm diameter) with the large number per unit area of 1.3 x 10(10) cm(-2). (C) 2006 Published by Elsevier B.V.
Keywords
Nanoporous alumina mask; CdTe nanodot arrays; Molecular beam epitaxy
ISSN
1567-1739
URI
https://pubs.kist.re.kr/handle/201004/135316
DOI
10.1016/j.cap.2006.01.036
Appears in Collections:
KIST Article > 2006
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