Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, J. H. | - |
dc.contributor.author | Park, J. Y. | - |
dc.contributor.author | Whang, C. N. | - |
dc.contributor.author | Yoo, K. -H. | - |
dc.contributor.author | Kim, S. S. | - |
dc.contributor.author | Choi, D. S. | - |
dc.contributor.author | Chae, K. H. | - |
dc.date.accessioned | 2024-01-21T03:00:53Z | - |
dc.date.available | 2024-01-21T03:00:53Z | - |
dc.date.created | 2021-09-01 | - |
dc.date.issued | 2006-07 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/135375 | - |
dc.description.abstract | A one-dimensional (1-D) ordered structure of ethylene (C2H4) molecules on a Si(001) surface has been investigated by using coaxial impact collision ion scattering spectroscopy (CAICISS) and computer simulations. In a previous paper, the di-sigma on-top site of the Si(001)-(2 x 1) surface was exposed at room temperature (RT) to 1001, (IL = 10(-6) Torr.sec)of C2H4 molecules, which were intially absorbed on that surface. With increasing number of C2H4 molecules, a structural change of C2H4/Si(001)-(2 x 1) surface was observed by using the low-energy electron diffraction (LEED). When the Si(001)-(2 x 1) surface at RT to 2001, of C2H4 molecules, the C2H4 molecules occupied the di-sigma on-top site on the Si(001)-(2 x 1) surface. With the help of a computer simulation, the C-C and Si-C bond lengths were found to be 1.61 +/- 0.05 angstrom and 1.81 +/- 0.05 angstrom respectively. The C2H4 molecules were also found to be adsorbed on the Si(001) surface on in tandem along the direction of Si dimer-rows. This result provides evidence supporting the mechanism of 1-D nano-structure formation based on the C2H4 molecules on Si(001) surface. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | ATOMIC-STRUCTURE | - |
dc.subject | ADSORPTION | - |
dc.title | One-dimensional ordered structure of C2H4 on a Si(001) surface | - |
dc.type | Article | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.1, pp.167 - 171 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 49 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 167 | - |
dc.citation.endPage | 171 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.identifier.kciid | ART001017867 | - |
dc.identifier.wosid | 000239073100027 | - |
dc.identifier.scopusid | 2-s2.0-33747074368 | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ATOMIC-STRUCTURE | - |
dc.subject.keywordPlus | ADSORPTION | - |
dc.subject.keywordAuthor | adsorption | - |
dc.subject.keywordAuthor | surface structure | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | ethylene | - |
dc.subject.keywordAuthor | low energy ion scattering (LEIS) | - |
dc.subject.keywordAuthor | low-energy electron diffraction (LEED) | - |
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