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dc.contributor.author남형도-
dc.contributor.author곽호상-
dc.contributor.authorL.Doyennette-
dc.contributor.author송진동-
dc.contributor.author최원준-
dc.contributor.author이정일-
dc.contributor.author조용훈-
dc.contributor.authorF. H. Julien-
dc.contributor.author최정우-
dc.contributor.author양해석-
dc.contributor.authorCho, Woon Jo-
dc.date.accessioned2024-01-21T03:34:30Z-
dc.date.available2024-01-21T03:34:30Z-
dc.date.created2021-09-06-
dc.date.issued2006-03-
dc.identifier.issn2288-6559-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/135693-
dc.description.abstractPL (photoluminescence), PLE (PL excitation) 그리고 근 적외선 투과 분광법을 활용하여 InAsGa/GaAs 우물 내 InAs 양자점 구조의 광학적 특성과 전자 버금 띠 구조에 대하여 연구하였다. 투과 스펙트럼과 PLE 스펙트럼으로부터 InAs 양자점 내 세 개의 구속 상태와 InGaAs/GaAs 우물 내에 두 개의 구속 상태가 존재함을 발견하였고, 광전류 스펙트럼에서 관측된 버금 띠 사이 전이들과 연관 지어 해석하였다.-
dc.languageKorean-
dc.publisher한국진공학회-
dc.title광학적 방법으로 측정된 양자우물 안의 InAs 양자점의 에너지 준위-
dc.title.alternativeOptical Characteristic of InAs Quantum Dots in an InGaAs/GaAs Well Structure-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국진공학회지, v.15, no.2, pp.209 - 215-
dc.citation.title한국진공학회지-
dc.citation.volume15-
dc.citation.number2-
dc.citation.startPage209-
dc.citation.endPage215-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART001002261-
dc.subject.keywordAuthor양자점-
dc.subject.keywordAuthor양자점 적외선 수광소자-
dc.subject.keywordAuthor전자 버금 때-
dc.subject.keywordAuthor비대칭 우물내의 양자점-
dc.subject.keywordAuthorWe investigated the optical property and the electronic subband structure of InAs quantum dots in an InAsGa/GaAs well structure utilizing photoluminescence (PL)-
dc.subject.keywordAuthorPL excitation (PLE) and near infrared transmission spectroscopy. From transmission and PLE spectra-
dc.subject.keywordAuthorwe found three bound states in the InAs quantum dot and two bound states in InGaAs/GaAs quantum well-
dc.subject.keywordAuthorand correlated to the results of intersubband transitions observed in photocurrent spectrum.-
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