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dc.contributor.authorKo, Jae Beom-
dc.contributor.authorKoo, Hyun Cheol-
dc.contributor.authorYi, Hyunjung-
dc.contributor.authorChang, Joonyeon-
dc.contributor.authorHan, Suk Hee-
dc.date.accessioned2024-01-21T03:35:20Z-
dc.date.available2024-01-21T03:35:20Z-
dc.date.created2021-09-02-
dc.date.issued2006-03-
dc.identifier.issn1738-8090-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/135710-
dc.description.abstractThe Rashba effect induced by spin-orbit interaction is a key mechanism to realize spin transistors. The Rashba effect, which is necessary for spin control, is electrically detected by Shubnikov-de Haas oscillation (SdH) and potentiometric measurement. The node positions of the beat pattern from SdH oscillation make it possible to obtain 5.93 meV of spin splitting energy and 1.15x10(-11) eV-m of Rashba constant in an inverted heterostruture at T=1.8 K. A spin dependent chemical potential shift is also observed in an open circuit potentiometric geometry using ferromagnet electrode. Using a conventional HEMT (High Electron Mobility Transistor) structure, resistance change above 3 Omega is obtained for the potentiometric measurement at T=5 K and 77 K.-
dc.languageEnglish-
dc.publisherKOREAN INST METALS MATERIALS-
dc.titleDetection of the Rashba Effect in a Two-Dimensional Electron Gas-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationELECTRONIC MATERIALS LETTERS, v.2, no.1, pp.49 - 52-
dc.citation.titleELECTRONIC MATERIALS LETTERS-
dc.citation.volume2-
dc.citation.number1-
dc.citation.startPage49-
dc.citation.endPage52-
dc.description.journalRegisteredClassscie-
dc.identifier.wosid000208605100010-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordAuthorRashba effect-
dc.subject.keywordAuthorspin-orbit interaction-
dc.subject.keywordAuthorSdH oscillation-
dc.subject.keywordAuthorpotentiometric measurement-
dc.subject.keywordAuthorHEMT structure-
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