Detection of the Rashba Effect in a Two-Dimensional Electron Gas

Abstract

The Rashba effect induced by spin-orbit interaction is a key mechanism to realize spin transistors. The Rashba effect, which is necessary for spin control, is electrically detected by Shubnikov-de Haas oscillation (SdH) and potentiometric measurement. The node positions of the beat pattern from SdH oscillation make it possible to obtain 5.93 meV of spin splitting energy and 1.15x10(-11) eV-m of Rashba constant in an inverted heterostruture at T=1.8 K. A spin dependent chemical potential shift is also observed in an open circuit potentiometric geometry using ferromagnet electrode. Using a conventional HEMT (High Electron Mobility Transistor) structure, resistance change above 3 Omega is obtained for the potentiometric measurement at T=5 K and 77 K.