Low-temperature silicon wafer-scale thermocompression bonding using electroplated gold layers in hermetic packaging

Authors
Park, GSKim, YKPaek, KKKim, JSLee, JHJu, BK
Issue Date
2005-08
Publisher
ELECTROCHEMICAL SOC INC
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.8, no.12, pp.G330 - G332
Abstract
We describe a low-temperature wafer-scale thermocompression bonding using electroplated gold layers. Silicon wafers were completely bonded at 320 C at a pressure of 2.5 MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. Helium leak rate was measured for application of thermocompression bonding to hermetic packaging and was 2.74 +/- 0.61 x 10(-11) Pa m(3)/s. Therefore, Au thermocompression bonding can be applied to high quality hermetic wafer level packaging of radio-frequency microelectromechanical system devices. (c) 2005 The Electrochemical Society.
Keywords
Thermocompression bonding; Hermatic packing; Electroplated gold
ISSN
1099-0062
URI
https://pubs.kist.re.kr/handle/201004/136256
DOI
10.1149/1.2077077
Appears in Collections:
KIST Article > 2005
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