Structural determination of the low-coverage phase of Al on Si(001) surface

Authors
Park, JYSeo, JHWhang, CNKim, SSChoi, DSChae, KH
Issue Date
2005-06-22
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF CHEMICAL PHYSICS, v.122, no.24
Abstract
The atomic structure of Al layer on Si(001)-(2x1) surface has been studied by coaxial impact collision ion scattering spectroscopy. When 0.5 monolayer (ML) of Al atoms are adsorbed on Si(001) at room temperature, it is found that Al adatoms are dimerized and Al ad-dimers are oriented parallel to the underlying Si dimers at the position of centering T3 site with a height of 1.02 A from the first layer of Si(001). The bond length of the Al dimer is 2.67 angstrom. With increasing Al coverage up to one ML, Al ad-dimers still occupied near T3 site and the next favorable site is near HH site. (c) 2005 American Institute of Physics.
Keywords
ION-SCATTERING SPECTROSCOPY; SI(100) SURFACE; GA; GROWTH; ORIENTATION; ADSORPTION; ION-SCATTERING SPECTROSCOPY; SI(100) SURFACE; GA; GROWTH; ORIENTATION; ADSORPTION; Atomic structure; Aluminum; Silicon; Reconstruction; Low energy ion scattering spectroscopy
ISSN
0021-9606
URI
https://pubs.kist.re.kr/handle/201004/136349
DOI
10.1063/1.1947767
Appears in Collections:
KIST Article > 2005
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