Development of sol-gel precursor system for direct-patternable PZT ferroelectric films containing La as a dopant

Abstract

Direct-patternable lanthanum substituted lead zirconate titanate (PLZT) films were prepared by sol-gel technique using orth-nitrobenzaldehyde as a photosensitive agent. PLZT films with various La concentration were formed on Pt(111)/Ti/SiO2/Si(100) substrate for direct-patterning of PLZT films and ferroelectric properties measurement. A well-defined and direct-patterned PLZT film was obtained and the improvement of leakage current density, fatigue resistance and dielectric constant with increased substitution of La in PLZT film were observed especially with 4 mol% La doped PLZT film. From this result, we confirmed that direct-patternable PLZT film is suitable for application in micro device.