DSpace at KISTKIST Article2005

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dc.contributor.authorPark, YM-
dc.contributor.authorPark, YJ-
dc.contributor.authorKim, KM-
dc.contributor.authorSong, JD-
dc.contributor.authorLee, JI-
dc.date.accessioned2024-01-21T05:31:02Z-
dc.date.available2024-01-21T05:31:02Z-
dc.date.created2021-09-04-
dc.date.issued2005-03-
dc.identifier.issn0951-3248-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/136692-
dc.description.abstractWe investigated the quantum-confined Stark effect (QCSE) in the self-assembled InAs quantum dots (QDs). The QDs are formed by the atomic layer molecular beam epitaxy (ALMBE) technique using alternately supplying InAs and GaAs sources. From the electric field dependent photoluminescence measurements, permanent dipole moment is estimated to p = (4.8 +/- 1.6) x 10(-29) Cm, indicating that QDs have a permanent dipole moment. This corresponds to the electron-hole separation of r = 3 +/- 1 angstrom.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.subjectISLANDS-
dc.subjectGAAS-
dc.titleElectron-hole separation in InAs quantum dots-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationCOMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, v.184, pp.439 - 442-
dc.citation.titleCOMPOUND SEMICONDUCTORS 2004, PROCEEDINGS-
dc.citation.volume184-
dc.citation.startPage439-
dc.citation.endPage442-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000229928100095-
dc.identifier.scopusid2-s2.0-33644512065-
dc.relation.journalWebOfScienceCategoryMaterials Science, Ceramics-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusISLANDS-
dc.subject.keywordPlusGAAS-
dc.subject.keywordAuthorInAs-
dc.subject.keywordAuthorQuantum dots-
dc.subject.keywordAuthorelectron-hole separation-
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