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dc.contributor.authorJun, KI-
dc.contributor.authorLee, JH-
dc.contributor.authorShin, KH-
dc.contributor.authorRhie, K-
dc.contributor.authorLee, BC-
dc.date.accessioned2024-01-21T05:34:11Z-
dc.date.available2024-01-21T05:34:11Z-
dc.date.created2021-09-03-
dc.date.issued2005-02-01-
dc.identifier.issn0304-8853-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/136749-
dc.description.abstractAn amorphous metallic FeZr layer is inserted inside the bottom magnetic layer in exchange-biased CoFe/Al2O3/CoFe magnetic tunnel junctions (MTJs). At room temperature, the tunneling magnetoresistance (TMR) increases from 25% to 36% before annealing, and from 45% to 52% after annealing. The junction resistance also increases with the FeZr thickness. The higher quality of the MTJ is attributed to the improved Al-oxide barrier due to the amorphousness of the FeZr layer. (C) 2004 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectMAGNETORESISTANCE-
dc.titleEnhancement of tunneling magneto resistance by inserting an amorphous nonmagnetic FeZr layer in magnetic tunnel junctions-
dc.typeArticle-
dc.identifier.doi10.1016/j.jmmm.2004.09.022-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.286, pp.158 - 161-
dc.citation.titleJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS-
dc.citation.volume286-
dc.citation.startPage158-
dc.citation.endPage161-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000226638400036-
dc.identifier.scopusid2-s2.0-11444264806-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordAuthoramorphous-
dc.subject.keywordAuthorMTJ-
dc.subject.keywordAuthorTMR-
dc.subject.keywordAuthorFeZr-
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KIST Article > 2005
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