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dc.contributor.authorChoi, WK-
dc.contributor.authorKim, DG-
dc.contributor.authorChoi, YW-
dc.contributor.authorLee, S-
dc.contributor.authorWoo, DH-
dc.contributor.authorKim, SH-
dc.date.accessioned2024-01-21T05:38:38Z-
dc.date.available2024-01-21T05:38:38Z-
dc.date.created2021-09-03-
dc.date.issued2005-01-10-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/136831-
dc.description.abstractThis study demonstrates the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36 V and 10 muA, respectively. The lasing threshold current is 131 mA at 25 degreesC. The output peak wavelength is 1570 nm at a bias current of 1.22 I-th and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals. (C) 2005 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectMU-M-
dc.subjectLASER-DIODE-
dc.subjectDEVICE-
dc.titleLasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window-
dc.typeArticle-
dc.identifier.doi10.1063/1.1850184-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.86, no.2-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume86-
dc.citation.number2-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000226701500008-
dc.identifier.scopusid2-s2.0-19744383689-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusMU-M-
dc.subject.keywordPlusLASER-DIODE-
dc.subject.keywordPlusDEVICE-
dc.subject.keywordAuthorOptical Thyristor-
dc.subject.keywordAuthorquantum well-
dc.subject.keywordAuthorlaser-
dc.subject.keywordAuthorwaveguide-
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