Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window
- Authors
- Choi, WK; Kim, DG; Choi, YW; Lee, S; Woo, DH; Kim, SH
- Issue Date
- 2005-01-10
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.86, no.2
- Abstract
- This study demonstrates the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36 V and 10 muA, respectively. The lasing threshold current is 131 mA at 25 degreesC. The output peak wavelength is 1570 nm at a bias current of 1.22 I-th and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals. (C) 2005 American Institute of Physics.
- Keywords
- MU-M; LASER-DIODE; DEVICE; MU-M; LASER-DIODE; DEVICE; Optical Thyristor; quantum well; laser; waveguide
- ISSN
- 0003-6951
- URI
- https://pubs.kist.re.kr/handle/201004/136831
- DOI
- 10.1063/1.1850184
- Appears in Collections:
- KIST Article > 2005
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.