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dc.contributor.authorChang, HJ-
dc.contributor.authorSuh, KM-
dc.contributor.authorPark, JH-
dc.contributor.authorGong, SC-
dc.contributor.authorShim, SI-
dc.contributor.authorKim, YT-
dc.contributor.authorSon, CS-
dc.date.accessioned2024-01-21T06:02:36Z-
dc.date.available2024-01-21T06:02:36Z-
dc.date.created2021-09-05-
dc.date.issued2004-12-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/136988-
dc.description.abstractFor application in a ferroelectric random access memory, capacitors with structures of Pt/(Bi, La)Ti3O12 (BLT)/Pt and Pt/BLT/Y2O3 film layers on Si(100) substrates were prepared by the solgel method, and BLT FET devices were fabricated by using Y2O3 as buffer layer. A Pt/BLT/Pt/Si capacitor showed no critical degradation in polarization values after retention read pulses input for 10(5.5) s. The capacitance-voltage data of the Pt/BLT/Y2O3/Si capacitors at input voltage of 5 V indicate that the memory window voltage decreased from 1.4 V to 0.6 V with increasing annealing temperature from 700 C to 750 C. From the drain current as a function of gate voltage (VG) for Pt/BLT/Y2O3/Si(100)-FET devices, the memory window voltage increased from 0.3 V to 0.8 V as VG increased from 3 V to 5 V.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectBLT THIN-FILMS-
dc.subjectCRYSTALLINE-
dc.titlePreparation and characterization of field effect transistor with (Bi,La)Ti3O12 ferroelectric gate material-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.S886 - S889-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume45-
dc.citation.startPageS886-
dc.citation.endPageS889-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART000961133-
dc.identifier.wosid000226119400099-
dc.identifier.scopusid2-s2.0-12744272473-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusBLT THIN-FILMS-
dc.subject.keywordPlusCRYSTALLINE-
dc.subject.keywordAuthorfield effect transistor-
dc.subject.keywordAuthor(Bi, La)Ti3O12 (BLT)-
dc.subject.keywordAuthorY2O3 buffer layer-
dc.subject.keywordAuthorferroelectric gate film-
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