Direct growth of SiC nanorods on Si using APCVD and single precursors

Abstract

SiC nanorod was grown by APCVD using TMS. Grown SiC nanorods had a 10 similar to 60nm diameters and lengths of several micrometers. Nanorod's diameters and lengths were different by kind of catalysts. Nanorod's growth scheme was divided by two regions with diameter's variations. At first region, nanorod was grown by VLS mechanism, but at the second region, nanorod growth was made by VS reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanorod's diametesr and its lengths. And the kind of catalysts and coating methods were affected growth direction and microstructures too.