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dc.contributor.authorKim, IS-
dc.contributor.authorKim, YM-
dc.contributor.authorChoi, IH-
dc.contributor.authorHong, SK-
dc.contributor.authorKim, WS-
dc.contributor.authorIl Shim, S-
dc.contributor.authorKim, YT-
dc.contributor.authorKim, YH-
dc.date.accessioned2024-01-21T06:09:29Z-
dc.date.available2024-01-21T06:09:29Z-
dc.date.created2021-09-02-
dc.date.issued2004-11-
dc.identifier.issn1058-4587-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137116-
dc.description.abstractEffect of neodymium substitution on the ferroelectric properties of Bi4Ti3O12 was investigated using a sol-gel method. We successfully synthesized 10 wt% homogeneous sol-gel solution of Bi3.15Nd0.85Ti3O12 (BNT) with 12% excess bismuth content. BNT thin films were fabricated on the Pt/TiO2/SiO2/Si substrates by spin coating deposition technique. The final film composition of Bi3.15Nd0.85Ti3O12 was obtained by Rutherford backscattering spectroscopy analysis. The 200-nm-thick BNT films have a strong (117) XRD peak with suppressed (00l) peaks due to the substitution of Nd, and the remanent polarization (2P(r)) value of Pt/BNT/Pt structure is 48 muC/cm(2) at 7V, which is significantly greater than those of other ferroelectric thin films such as PZT SBT and BLT.-
dc.languageEnglish-
dc.publisherTAYLOR & FRANCIS LTD-
dc.subjectBISMUTH TITANATE-
dc.subjectDOMAIN-STRUCTURE-
dc.subjectEVOLUTION-
dc.titleSol-gel derived Nd-substituted Bi4Ti3O12 thin film and its electrical properties-
dc.typeArticle-
dc.identifier.doi10.1080/10584580490893060-
dc.description.journalClass1-
dc.identifier.bibliographicCitationINTEGRATED FERROELECTRICS, v.65, pp.193 - 201-
dc.citation.titleINTEGRATED FERROELECTRICS-
dc.citation.volume65-
dc.citation.startPage193-
dc.citation.endPage201-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000226089500023-
dc.identifier.scopusid2-s2.0-33751169815-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusBISMUTH TITANATE-
dc.subject.keywordPlusDOMAIN-STRUCTURE-
dc.subject.keywordPlusEVOLUTION-
dc.subject.keywordAuthorferroelectric memory-
dc.subject.keywordAuthorBi-layered structure-
dc.subject.keywordAuthorBNT-
dc.subject.keywordAuthorexcess bismuth-
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