Photoluminescence of Er-implanted GaN
- Authors
- Son, CS; Kim, S; Kim, YH; Han, IK; Kim, YT; Wakahara, A; Choi, IH; Lopez, HC
- Issue Date
- 2004-10
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.4, pp.955 - 958
- Abstract
- Visible green emission has been observed from Er(Erbium)-doped GaN epilayers. Various doses of Er ions were implanted in GaN epilayers by using ion implantation. The optical properties of Er-doped GaN were analyzed by using photoluminescence (PL). Sharp emission lines due to inner 4f shell transitions for Er3+ were observed in the PL spectrum of Er-implanted GaN. The emission spectrum consisted of two narrow green lines, 537 and 558 nm. The green emission lines were identified as Er3+ transitions from the H-5(11/2) and the S-4(3/2) levels to the I-4(15/2) ground state. The stronger peaks in the 5 x 10(14) cm(-2) Sample, together with the relatively higher intensity of the Er3+ luminescence in the lower doped sample, indicate that some damage remains in the 1 x 10(15) cm(-2) sample.
- Keywords
- ELECTROLUMINESCENCE; EMISSION; LAYER; EU; ELECTROLUMINESCENCE; EMISSION; LAYER; EU; Er; GaN; implantation; photoluminescence
- ISSN
- 0374-4884
- URI
- https://pubs.kist.re.kr/handle/201004/137200
- Appears in Collections:
- KIST Article > 2004
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