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dc.contributor.authorKim, KM-
dc.contributor.authorPark, YJ-
dc.contributor.authorSon, SH-
dc.contributor.authorLee, SH-
dc.contributor.authorLee, JI-
dc.contributor.authorPark, JH-
dc.contributor.authorPark, SK-
dc.date.accessioned2024-01-21T06:38:42Z-
dc.date.available2024-01-21T06:38:42Z-
dc.date.created2021-09-04-
dc.date.issued2004-08-
dc.identifier.issn1386-9477-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137369-
dc.description.abstractAligned quantum dots (QDs) were successfully formed along the <110> direction on a strain-engineered layer using InAs/GaAs superlattice (SL). The aligned QDs have good quantum confinements without degradation of optical properties. It is found from transmission electron spectroscopy and Raman scattering measurements that the strained InAs/GaAs SL acts as a strained layer having tensile stress for the site control of QDs without the generation of defects acting as nonradiative recombination centers. The artificial array of self-assembled QDs can provide a clue for the easy and high throughput fabrication method for the application of single-electron devices. (C) 2004 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER-
dc.subjectMISFIT DISLOCATIONS-
dc.subjectSELF-ORGANIZATION-
dc.subjectFABRICATION-
dc.subjectALIGNMENT-
dc.titleArtificial array of InAs quantum dots on a strain-engineered superlattice-
dc.typeArticle-
dc.identifier.doi10.1016/j.physe.2004.04.005-
dc.description.journalClass1-
dc.identifier.bibliographicCitationPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.24, no.1-2, pp.148 - 152-
dc.citation.titlePHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES-
dc.citation.volume24-
dc.citation.number1-2-
dc.citation.startPage148-
dc.citation.endPage152-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000223122700032-
dc.identifier.scopusid2-s2.0-3142671353-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusMISFIT DISLOCATIONS-
dc.subject.keywordPlusSELF-ORGANIZATION-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusALIGNMENT-
dc.subject.keywordAuthorquantum-dot array-
dc.subject.keywordAuthoralignment-
dc.subject.keywordAuthorstrain-engineering-
dc.subject.keywordAuthorsingle-electron devices-
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KIST Article > 2004
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