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dc.contributor.authorLee, YH-
dc.contributor.authorLee, CW-
dc.contributor.authorKim, DH-
dc.contributor.authorJang, YT-
dc.contributor.authorChoi, CH-
dc.contributor.authorShin, KS-
dc.contributor.authorJu, BK-
dc.date.accessioned2024-01-21T06:41:04Z-
dc.date.available2024-01-21T06:41:04Z-
dc.date.created2021-09-05-
dc.date.issued2004-07-11-
dc.identifier.issn0009-2614-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137412-
dc.description.abstractWe describe the gate coupling of a rooted grown suspended carbon nanotube (CNT) between two microsized catalytic contact electrodes using a direct parallel growth technique. All-shell Multiwalled carbon nanotubes (MWNTs) were bonded to contact electrodes because MWNTs were grown from the electrodes. The response characteristics of the devices with the gate voltage show typical p-type field effect transistor function at a high-temperature regime and asymmetric Coulomb blockage behavior in low temperatures. Results of the observation suggest that our unique structure, i.e., catalytic ferromagnetic electrode/all-shell bonded MWNT/ferromagnetic electrode, made by direct parallel growth may be a promising key element for nanoelectronics and nanoelectro-mechanical-systems (NEMS). (C) 2004 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectELECTRICAL BREAKDOWN-
dc.subjectTRANSISTOR-
dc.titleGating effect of suspended multiwalled carbon nanotube with all-shell rooted from electrodes: parallel growth from ferromagnetic catalytic contact-
dc.typeArticle-
dc.identifier.doi10.1016/j.cplett.2004.05.076-
dc.description.journalClass1-
dc.identifier.bibliographicCitationCHEMICAL PHYSICS LETTERS, v.392, no.4-6, pp.319 - 323-
dc.citation.titleCHEMICAL PHYSICS LETTERS-
dc.citation.volume392-
dc.citation.number4-6-
dc.citation.startPage319-
dc.citation.endPage323-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000222553100007-
dc.identifier.scopusid2-s2.0-3042530816-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryPhysics, Atomic, Molecular & Chemical-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTRICAL BREAKDOWN-
dc.subject.keywordPlusTRANSISTOR-
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KIST Article > 2004
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