Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, YH | - |
dc.contributor.author | Lee, CW | - |
dc.contributor.author | Kim, DH | - |
dc.contributor.author | Jang, YT | - |
dc.contributor.author | Choi, CH | - |
dc.contributor.author | Shin, KS | - |
dc.contributor.author | Ju, BK | - |
dc.date.accessioned | 2024-01-21T06:41:04Z | - |
dc.date.available | 2024-01-21T06:41:04Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2004-07-11 | - |
dc.identifier.issn | 0009-2614 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/137412 | - |
dc.description.abstract | We describe the gate coupling of a rooted grown suspended carbon nanotube (CNT) between two microsized catalytic contact electrodes using a direct parallel growth technique. All-shell Multiwalled carbon nanotubes (MWNTs) were bonded to contact electrodes because MWNTs were grown from the electrodes. The response characteristics of the devices with the gate voltage show typical p-type field effect transistor function at a high-temperature regime and asymmetric Coulomb blockage behavior in low temperatures. Results of the observation suggest that our unique structure, i.e., catalytic ferromagnetic electrode/all-shell bonded MWNT/ferromagnetic electrode, made by direct parallel growth may be a promising key element for nanoelectronics and nanoelectro-mechanical-systems (NEMS). (C) 2004 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | ELECTRICAL BREAKDOWN | - |
dc.subject | TRANSISTOR | - |
dc.title | Gating effect of suspended multiwalled carbon nanotube with all-shell rooted from electrodes: parallel growth from ferromagnetic catalytic contact | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.cplett.2004.05.076 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | CHEMICAL PHYSICS LETTERS, v.392, no.4-6, pp.319 - 323 | - |
dc.citation.title | CHEMICAL PHYSICS LETTERS | - |
dc.citation.volume | 392 | - |
dc.citation.number | 4-6 | - |
dc.citation.startPage | 319 | - |
dc.citation.endPage | 323 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000222553100007 | - |
dc.identifier.scopusid | 2-s2.0-3042530816 | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Atomic, Molecular & Chemical | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ELECTRICAL BREAKDOWN | - |
dc.subject.keywordPlus | TRANSISTOR | - |
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