Study of optical heterodyne mixing characteristics in an A1lnAs/GalnAs transferred-substrate double heterojunction bipolar transistor

Abstract

The heat frequency dependency of the optical heterodyne mixing characteristics of a transferred-substrate AlInAs/GaInAs double heterojunction bipolar transistor (DHBT) have been investigated from 1 to 25 GHz in 1-GH7 steps at a center wavelength of 1319 mn. The experimental results show a high-speed but low-responsivity response followed by a low-speed but high-responsivity response. The 3-dB bandwidth of the low-speed response is 3 GHz. Various ways of increasing the high frequency responsivity are discussed. (C) 2004 Wiley Periodicals, Inc.