기상휘발법에 의한 이산화규소 나노와이어의 성장

Abstract

SiO2 nanowires were synthesized using the vapor evaporation method. Grown nanowires had a different shapes by kind of substrates. Diameters and lengths of the nanowires increased with increasing growth temperature and time. Mean diameters and lengths of SiO2 nanowire were different by kind of substrates. These variations were attributed to nanowire densities on the substrates. The kind of substrates affected microstructure and PL properties of grown nanowires. In case of Al2O3 and quartz substrates, additional O2 were supported during growth stages, and made a nucleation site. Therefore relative narrow nanowire was grown on Al2O3 and quartz substrates. Optical property were measured by photoluminescence spectroscopy. Relatively broad peak was obtained and mean peak positioned at 450 and 420nm. however in case of quartz substrates, mean peak positioned at 370nm. These peak shift was contributed to the size and substrate effects.