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dc.contributor.authorLee, JH-
dc.contributor.authorPark, SY-
dc.contributor.authorJun, KI-
dc.contributor.authorShin, KH-
dc.contributor.authorHong, J-
dc.contributor.authorRhie, K-
dc.contributor.authorLee, BC-
dc.date.accessioned2024-01-21T07:03:49Z-
dc.date.available2024-01-21T07:03:49Z-
dc.date.created2021-09-02-
dc.date.issued2004-06-
dc.identifier.issn0370-1972-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137549-
dc.description.abstractThe transport properties of ferromagnet/Al2O3/semiconductor tunnel junctions were investigated. Si and GaAs substrates were used, and CoFe and NiFe were taken for ferromagnets. Diode characteristics were observed in current-voltage curves. The dependences on the Al2O3 thickness and temperature were also studied. It is found that the Al2O3 layer plays a crucial role in preventing inter-diffusion at the interface. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectELECTRICAL SPIN INJECTION-
dc.titleTransport properties of metal/insulator/semiconductor tunnel junctions-
dc.typeArticle-
dc.identifier.doi10.1002/pssb.200304693-
dc.description.journalClass1-
dc.identifier.bibliographicCitationPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.241, no.7, pp.1506 - 1509-
dc.citation.titlePHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS-
dc.citation.volume241-
dc.citation.number7-
dc.citation.startPage1506-
dc.citation.endPage1509-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000222123000030-
dc.identifier.scopusid2-s2.0-4644244864-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusELECTRICAL SPIN INJECTION-
dc.subject.keywordAuthorFIS tunnel juction-
dc.subject.keywordAuthorspin injection-
dc.subject.keywordAuthordiode-
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