Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy

Abstract

We have investigated the confined energy level of InAs quantum dots embedded in InP layer using deep-level transient spectroscopy (DLTS) measurement. The higher temperature for the capping layer growth yields a low activation energy (E-a = 0.56 eV) and a low barrier height (Ee(B) = 0.18 eV) whereas the lower temperature yields a high activation energy (E-a = 0.82 eV) and high barrier height (Ee(B) = 0.52 eV). It was found that the higher temperature for the growth of the capping layer provides a condition for enhancing the confinement energy in InAs QDs/InP structure.