DSpace at KISTKIST Article2004

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dc.contributor.authorPark, SY-
dc.contributor.authorLee, JH-
dc.contributor.authorShin, IJ-
dc.contributor.authorHong, JP-
dc.contributor.authorShin, KH-
dc.contributor.authorPhie, K-
dc.contributor.authorLee, BC-
dc.date.accessioned2024-01-21T07:04:59Z-
dc.date.available2024-01-21T07:04:59Z-
dc.date.created2021-09-02-
dc.date.issued2004-06-
dc.identifier.issn0031-8965-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137571-
dc.description.abstractNano-size magnetic tunnel junctions (MTJs) were fabricated by using e-beam lithography and oxidizing the top ferromagnetic (free) layer with inductively coupled plasma while the junction area was covered with PR. A significant improvement in the physical properties of the MTJ has been observed compared to those patterned by conventional methods. The tunnelling magnetoresistance (TMR) was 31% for 140 x 140 nm(2) MTJ at room temperature. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectTEMPERATURE-
dc.titleTunneling magnetoresistance of nano-scale magnetic tunnel junctions-
dc.typeArticle-
dc.identifier.doi10.1002/pssa.200304678-
dc.description.journalClass1-
dc.identifier.bibliographicCitationPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.201, no.8, pp.1692 - 1695-
dc.citation.titlePHYSICA STATUS SOLIDI A-APPLIED RESEARCH-
dc.citation.volume201-
dc.citation.number8-
dc.citation.startPage1692-
dc.citation.endPage1695-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000222401400021-
dc.identifier.scopusid2-s2.0-3142715351-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordAuthorTunneling magnetoresistance-
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