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dc.contributor.authorKim, I.-
dc.contributor.authorKim, J.-
dc.contributor.authorHan, S. H.-
dc.date.accessioned2024-01-21T07:07:23Z-
dc.date.available2024-01-21T07:07:23Z-
dc.date.created2021-09-02-
dc.date.issued2004-05-
dc.identifier.issn0304-8853-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137615-
dc.description.abstractThe microstructural changes of Ga1-xMnxN films grown at various substrate temperatures ( 350 - 700 degrees C) by a PEMBE system have been investigated using transmission electron microscopy. Ga1-xMnxN film with low dislocation density was grown epitaxially at 700 degrees C but dislocation density increased with the decrease of substrate temperature. Moreover, HCP and FCC structures coexisted in the vicinity of interface between GaNand Ga1-xMnxN films grown below 450 degrees C. (C) 2004 Elsevier B. V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.titleMicrostructural analysis of Ga1-xMnxN films grown by PEMBE-
dc.typeArticle-
dc.identifier.doi10.1016/j.jmmm.2003.12.797-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.272, pp.E1529 - E1531-
dc.citation.titleJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS-
dc.citation.volume272-
dc.citation.startPageE1529-
dc.citation.endPageE1531-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000202897200592-
dc.identifier.scopusid2-s2.0-23144466604-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthormagnetic semiconductors-
dc.subject.keywordAuthorGa1-xMnxN-
dc.subject.keywordAuthorstructural analysis-
dc.subject.keywordAuthorinterfacial defect-
dc.subject.keywordAuthorTEM-
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