Microstructural analysis of Ga1-xMnxN films grown by PEMBE

Abstract

The microstructural changes of Ga1-xMnxN films grown at various substrate temperatures ( 350 - 700 degrees C) by a PEMBE system have been investigated using transmission electron microscopy. Ga1-xMnxN film with low dislocation density was grown epitaxially at 700 degrees C but dislocation density increased with the decrease of substrate temperature. Moreover, HCP and FCC structures coexisted in the vicinity of interface between GaNand Ga1-xMnxN films grown below 450 degrees C. (C) 2004 Elsevier B. V. All rights reserved.