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dc.contributor.authorJang, SH-
dc.contributor.authorKang, T-
dc.contributor.authorLee, JH-
dc.contributor.authorKim, KY-
dc.date.accessioned2024-01-21T07:08:52Z-
dc.date.available2024-01-21T07:08:52Z-
dc.date.created2021-09-02-
dc.date.issued2004-05-
dc.identifier.issn0304-8853-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137643-
dc.description.abstractThe properties of Si-based magnetic tunnel transistor (MTT) with high transfer ratio are presented. MTTs were prepared on Si(100) substrates by magnetron sputter deposition. Magnetocurrent ratios of 53-55% and high transfer ratios of (1-2) x 10(-4) for emitter-base bias 1.5-2 V were obtained at 77 K. High collector current value of about 0.9 muA for 2 V was also obtained. (C) 2003 Published by Elsevier B.V.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.titleSi-based magnetic tunnel transistor with high transfer ratio-
dc.typeArticle-
dc.identifier.doi10.1016/j.jmmm.2003.12.707-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.272, pp.1930 - 1932-
dc.citation.titleJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS-
dc.citation.volume272-
dc.citation.startPage1930-
dc.citation.endPage1932-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000222236800126-
dc.identifier.scopusid2-s2.0-21044433878-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordAuthorspin valve-
dc.subject.keywordAuthortunnel junctions-
dc.subject.keywordAuthortransistor-
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